(Hong Kong)
Product Summary
The 2SK176 is a silicon N-Channel MOS FET.
Parametrics
2SK176 absolute maximum ratings: (1)Drain to source voltage VDSS: 200 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 8A; (4)Body to drain diode reverse drain current IDR: 8 A; (6)Channel dissipation Pch: 125 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
2SK176 features: (1)High power gain; (2)Excellent frequency response; (3)High speed switching; (4)Wide area of safe operation; (5)Enhancement-mode; (6)Good complementary characteristics; (7)Equipped with Gate protection diodes.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK1760 |
Other |
|
Data Sheet |
Negotiable |
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2SK1761 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK1762 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK1764 |
Other |
|
Data Sheet |
Negotiable |
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