Product Summary

The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case. It is intended for general purpose power amplifier and switching applications.

Parametrics

MJ802 absolute maximum ratings: (1)VCEO Collector-emitter Voltage (IB = 0): 90 V; (2)VCBO Collector-base Voltage (IE = 0): 100 V; (3)VEBO Emitter-Base Voltage (IC = 0): 4 V; (4)IC Collector Current: 30 A; (5)IB Base Current: 7.5 A; (6)Ptot Total Dissipation at Tc ≤ 25 ℃: 200 W; (7)Tstg Storage Temperature: -65 to 200 ℃; (8)Tj Max. Operating Junction Temperature: 200 ℃.

Features

MJ802 features: (1)STMicroelectronics preferred sales type.

Diagrams

MJ802 INTERNAL SCHEMATIC DIAGRAM

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJ802
MJ802

STMicroelectronics

Transistors Bipolar (BJT) NPN Darlington Power

Data Sheet

Negotiable 
MJ802G
MJ802G

ON Semiconductor

Transistors Bipolar (BJT) 30A 90V 200W NPN

Data Sheet

0-1: $2.11
1-25: $1.72
25-100: $1.55
100-500: $1.40